The
insulated Gate Bipolar Transistor (IGBT) was
invented in the 1970s and can be thought off as a
hybrid of
a high power
bipolar junction transistor and a
MOSFET. It
has the high power
characteristics of a BJT but is
voltage
controlled like a MOSFET. It is used in applications where a high
current must be switched by a low current control
circuit.
IGBTs can be found in
switch
mode power supplies,
defibrillators and
driving circuits for the field
coils in some
MAGLEV trains.
These are the most used
symbols for the IGBT
_ E
_ E \|
__ | \| __ |/
G ||/ G |:
|| OR ||\
||\ |:_
| \ '|\|
C \ C
G Gate
C Collector
E Emitter